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热处理工艺对合金薄膜电阻及其稳定性的影响     被引量:3

Effects of heat treatment process on alloy thin film resistance and its stability

文献类型:期刊文献

中文题名:热处理工艺对合金薄膜电阻及其稳定性的影响

英文题名:Effects of heat treatment process on alloy thin film resistance and its stability

作者:彭银桥[1];甘元驹[1]

机构:[1]湛江海洋大学信息学院,广东湛江524088

年份:2005

卷号:24

期号:7

起止页码:27

中文期刊名:传感器技术

外文期刊名:Journal of Transducer Technology

收录:CSTPCD、、北大核心2004、CSCD2011_2012、北大核心、CSCD

基金:国家自然科学基金资助项目(69971007;69890227)

语种:中文

中文关键词:薄膜合金电阻;压力传感器;热处理;稳定性

外文关键词:thin film alloy resistance; pressure sensors; heat treatment; stability

中文摘要:利用离子束溅射镀膜技术,在17-4PH不锈钢弹性衬底上直接溅射SiO2绝缘膜和NiCr薄膜,制备了一种新型的压力传感器用合金薄膜。分析了热处理工艺对合金薄膜电阻稳定性的影响,对NiCr薄膜电阻进行了4种热处理工艺,获得了使合金薄膜电阻长期稳定的热处理工艺参数在SiOx和N2的保护下,673K退火1h,并在473K下保温24h。用该工艺能制备适应各种恶劣环境的高精度压力传感器。

外文摘要:Alloy thin film for advanced pressure sensors is manufactured by means of ion-beam sputtering SiO_2 insulation film and NiCr thin film on the 17-4PH stainless steel elastic substrate.The effects on stability of thin film alloy resistance are thoroughly analyzed.The NiCr thin film resistance is respectively heat-treated by four processes,and paramaters of heat treatment that make thin film resistance stable are obtained.The thin film resistance is heat-treated under protection of SiO_x and N_2 at 673K for 1h,then it is kept at 473K for 24h.Pressure sensors of high precision for harsh environments can be manufactured by this process.

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