文献类型：期刊文献

英文题名：Uniform resistive switching properties of fully transparent TiO₂-based memory devices

作者：Zou, Lilan[1];Hu, Wei[2];Xie, Wei[3];Bao, Dinghua[3]

机构：[1]Guangdong Ocean Univ, Coll Elect & Informat Engn, Dept Phys & Optoelect, Zhanjiang 524088, Peoples R China;[2]Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Minist Educ, Chongqing 400044, Peoples R China;[3]Sun Yat Sen Univ, Sch Mat Sci & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

年份：2017

卷号：693

起止页码：1180

外文期刊名：JOURNAL OF ALLOYS AND COMPOUNDS

收录：SCI-EXPANDED(收录号：WOS:000388610400150)、、WOS

基金：The authors gratefully acknowledge financial support from Natural Science Foundation of China (No. 51372281), Natural Science Foundation of Guangdong Province, China (No. 2015A030311019), Guangdong Province Science and Technology Plan Project Public Welfare Fund and Ability Construction Project (No. 2016A010103041).

语种：英文

外文关键词：Resistive switching; Transparent device; TiO2 film; Conductive mechanism

外文摘要：Uniform resistive switching properties were observed in fully transparent indium-tin-oxide (ITO)/TiO2 film/F-doped SnO2 (FTO) devices where the TiO2 films were fabricated by chemical solution deposition method. In addition to high transmittance of above 70% for visible light, good resistive switching parameters, such as centralized reset and set voltages, stable resistance values at high and low resistance states (read at 0.2 V), and good retention data (up to 10000 s) also presented in the transparent memory devices. The dominant conducting mechanisms were Ohmic behavior and Schottky emission at low resistance state and high resistance state. The resistive switching phenomenon was explained by formation and rupture of the filaments, in which oxygen ions migration and current-induced thermal effect play important roles. Our results show the potential application of the ITO/TiO2/FTO cell in transparent electronics devices. (C) 2016 Elsevier B.V. All rights reserved.