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Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films  ( SCI-EXPANDED收录 EI收录)   被引量:18

文献类型:期刊文献

英文题名:Influence of radiofrequency power on compositional, structural and optical properties of amorphous silicon carbonitride films

作者:Peng, Yinqiao[1,2];Zhou, Jicheng[1];Zhang, Zhichao[1];Zhao, Baoxing[1];Tan, Xiaochao[1]

机构:[1]Cent S Univ, Changsha 410083, Peoples R China;[2]GuangDong Ocean Univ, Coll Informat, Zhanjiang 524088, Peoples R China

年份:2010

卷号:256

期号:7

起止页码:2189

外文期刊名:APPLIED SURFACE SCIENCE

收录:SCI-EXPANDED(收录号:WOS:000273669300039)、、EI(收录号:20100312639915)、Scopus(收录号:2-s2.0-74149089626)、WOS

基金:The work was supported by National Natural Science Foundation of China (No. 60371046) and GuangDong Ocean University Natural Science Foundation (No. 0612168). The authors thank Senior Engineer Dihui Huang for his support during film deposition, AFM and XRD analysis.

语种:英文

外文关键词:Amorphous SiCN films; Magnetron sputtering; RF power; Composition; Structure; Optical band gap

外文摘要:The silicon carbonitride (SiCN) films were deposited on n-type Si (1 0 0) and glass substrates by the radiofrequency (RF) reactive magnetron sputtering of polycrystalline silicon target under mixed reactive gases of acetylene and nitrogen. The films have been characterized by energy dispersive spectrometer (EDS), atomic force microscope (AFM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and ultraviolet-visible spectrophotometer (UVS). The influence of RF power on the compositional, morphological, structural and optical properties of the SiCN films was investigated. The SiCN films deposited at room temperature are amorphous, and the C, Si and O compositions except N in the films are sensitive to the RF power. The surface roughness and optical band gap decrease as the RF power increases. The main bonds in the SiCN films are C-N, N-H-n, C-H-n, C-C, C equivalent to N, Si-H and Si-C, and the intensities of the C equivalent to N, Si-H and C-H-n bonds increase with increment of the RF power. The mechanisms of the influence of RF power on the characteristics of the films are discussed in detail. (C) 2009 Elsevier B.V. All rights reserved.

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