文献类型：期刊文献

英文题名：Effect of annealing temperature and composition on photoluminescence properties of magnetron sputtered SiCN films

作者：Peng, Yinqiao[1,2];Zhou, Jicheng[1];Zhao, Baoxing[1];Tan, Xiaochao[1];Zhang, Zhichao[1]

机构：[1]Cent S Univ, Changsha 410083, Hunan, Peoples R China;[2]GuangDong Ocean Univ, Coll Informat, Zhanjiang 524088, Peoples R China

年份：2011

卷号：519

期号：7

起止页码：2083

外文期刊名：THIN SOLID FILMS

收录：SCI-EXPANDED(收录号：WOS:000287543300007)、、EI(收录号：20110413623534)、Scopus(收录号：2-s2.0-78751645635)、WOS

基金：The work was supported by the National Natural Science Foundation of China (No. 60371046) and the GuangDong Ocean University Natural Science Foundation (No. 0612168). The authors thank Senior Engineer Dihui Huang for his support during film deposition, XRD and PL analysis.

语种：英文

外文关键词：Silicon carbonitride; Sputtering; Annealing; Composition; Structure; Photoluminescence

外文摘要：Silicon carbonitride (SiCN) films were prepared by means of reactive magnetron sputtering of a sintered SiC target on n-type Si (1 0 0) substrates in the reactant gas of nitrogen, and then the films were respectively annealed at 600, 800 and 1100 degrees C for 5 min in nitrogen ambient The films were characterized by energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy and photoluminescence (PL) spectrophotometry. Intense PL peaks at 370, 400 and 440 nm were observed at room temperature. The results show that annealing temperature and composition play an important role in the structures and PL properties of the films. The annealing temperature of 600 degrees C favors the formation of the SiC (1 0 9) crystal in the SiCN films, and results in a maximal PL peak. The intensity of the 440 nm PL peak can be improved by increasing the abundance of the Si-C bond. (C) 2010 Elsevier B.V. All rights reserved.