详细信息
Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering ( SCI-EXPANDED收录 EI收录) 被引量:19
文献类型:期刊文献
英文题名:Structural and optical properties of the SiCN thin films prepared by reactive magnetron sputtering
作者:Peng, Yinqiao[1,2];Zhou, Jicheng[1];Zhao, Baoxing[1];Tan, Xiaochao[1];Zhang, Zhichao[1]
机构:[1]Cent S Univ, Changsha 410083, Peoples R China;[2]GuangDong Ocean Univ, Coll Informat, Zhanjiang 524088, Peoples R China
年份:2011
卷号:257
期号:9
起止页码:4010
外文期刊名:APPLIED SURFACE SCIENCE
收录:SCI-EXPANDED(收录号:WOS:000286459600034)、、EI(收录号:20110413627554)、Scopus(收录号:2-s2.0-78951469663)、WOS
基金:The work was supported by National Natural Science Foundation of China (no.60371046), Hunan Province Key Project of Science and Technology (Project no.08FJ1002) and GuangDong Ocean University Natural Science Foundation (no. 0612168). The authors thank Senior Engineer Dihui Huang for his support during film deposition and XRD analysis.
语种:英文
外文关键词:SiCN; Reactive magnetron sputtering; C content; Structure; Optical band gap
外文摘要:Silicon carbonitride (SiCN) thin films were deposited on n-type Si (100) and glass substrates by reactive magnetron sputtering of a polycrystalline silicon target in a mixture of argon (Ar), nitrogen (N-2) and acetylene (C2H2). The properties of the films were characterized by scanning electron microscope with an energy dispersive spectrometer, X-ray diffraction, Fourier transform infrared spectroscopy, X-ray photoelectron spectrometry and ultraviolet-visible spectrophotometer. The results show that the C2H2 flow rate plays an important role in the composition, structural and optical properties of the films. The films have an even surface and an amorphous structure. With the increase of C2H2 flow rate, the C content gradually increases while Si and N contents have a tendency to decrease in the SiCN films, and the optical band gap of the films monotonically decreases. The main bonds are Si-O, N-H-n, C-C, C-N, Si-N, Si-C and Si-H in the SiCN films while the chemical bonding network of Si-O, C-C, C-O, C-N, N-Si and C=N is formed in the surface of the SiCN films. (C) 2010 Elsevier B. V. All rights reserved.
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