文献类型：期刊文献

英文题名：MICROSTRUCTURE AND DIELECTRIC PROPERTIES OF SILICON CARBONITRIDE DIELECTRIC BARRIER FILMS DEPOSITED BY SPUTTERING

作者：Peng, Yinqiao[1];Zhou, Jicheng[2];Gong, Jiehong[3];Yu, Qinrong[3];Lei, Guibin[4]

机构：[1]GuangDong Ocean Univ, Sch Elect & Informat Engn, Zhanjiang 524088, Peoples R China;[2]Cent S Univ, Sch Energy Sci & Engn, Changsha 410083, Hunan, Peoples R China;[3]China Elect Technol Grp Corp, Res Inst 48, Changsha 410111, Hunan, Peoples R China;[4]GuangDong Ocean Univ, Guangdong Prov Key Lab Coastal Ocean Variat & Dis, Zhanjiang 524088, Peoples R China

年份：2018

卷号：25

期号：3

外文期刊名：SURFACE REVIEW AND LETTERS

收录：SCI-EXPANDED(收录号：WOS:000427076800004)、、EI(收录号：20172803922405)、Scopus(收录号：2-s2.0-85021810707)、WOS

基金：The work was supported by Science and Technology Project of Guangdong Province under contract no. 2016A010101028 and no. 2014A010103030 and by the Program for Scientific Research Start-up Funds of Guangdong Ocean University (no. E15046).

语种：英文

外文关键词：Silicon carbonitride; sputtering; microstructure; dielectric constant; dielectric barrier

外文摘要：Silicon carbon nitride (SiCN) films were prepared on silicon substrate by reactive magnetron sputtering of a sintered silicon carbide target in a mixture of argon, nitrogen and acetylene. Detailed studies including energy dispersive spectrometer, atomic force microscope, X-ray diffraction, Fourier transformed infrared spectrometry and C-V measuring instrument were performed. The as-deposited SiCN films do not exhibit obvious crystalline phase, and the SiCN films annealed at 600 degrees C show SiC crystal and graphite carbon. The SiCN films mainly consist of Si-N, Si-C, Si-O, C-C, C N, Si-H-n and N-H-n bonds, and increasing C2H2 flow rate promotes the formation of C-C, N-H-n and Si-N bonds. The SiCN film with low dielectric constant of 3.8 and compact structure was successfully prepared.