文献类型：期刊文献

英文题名：Multilevel resistive switching performance of TiO2-based flexible memory prepared by low-temperature sol-gel method with UV irradiation

作者：Zou, Lilan[1]

机构：[1]Guangdong Ocean Univ, Coll Elect & Informat Engn, Dept Phys & Optoelect, Zhanjiang 524088, Peoples R China

年份：2021

卷号：24

起止页码：32

外文期刊名：CURRENT APPLIED PHYSICS

收录：SCI-EXPANDED(收录号：WOS:000631749300001)、、WOS

基金：The authors gratefully acknowledge financial support from Natural Science Foundation of China (No. 11704080) .

语种：英文

外文关键词：Resistive switching; Flexible memory; Low-temperature sol-gel method; UV irradiation

外文摘要：The flexible Ag/TiO2/ITO/PET resistive switching memory is prepared by low-temperature sol-gel method with UV irradiation, and the simple method that combined the advantages of sol-gel method and low temperature can be applied to fabricate high-quality film. The flexible Ag/TiO2/ITO/PET memory device displays good resistive behavior, for instance, the narrow distributions of switching voltages, good cycle endurance, and long retention time. Meanwhile, the multilevel resistance states of the device can be realized by controlling the compliance current or reset voltages, showing the potential of applications in neural networks and high-density storge. In addition, flexibility of the Ag/TiO2/ITO/PET is studied, which exhibit good endurance and retention properties under bending condition. The I-V curves are replotted and fitted for analyzing the conductive mechanism of the device. The fitting results show that SCLC and Ohmic mechanism are main mechanisms of high resistance state and low resistance state respectively. The electrochemical and thermochemical modes are adopted to explain resistive switching behavior. Our results indicate the Ag/TiO2/ITO/PET memory has potential application in wearable and foldable electronics.