文献类型：期刊文献

英文题名：Microstructure and optical properties of SiCN thin films deposited by reactive magnetron sputtering

作者：Peng, Yinqiao[1];Zhou, Jicheng[2];Gong, Jiehong[3];Yu, Qinrong[3]

机构：[1]GuangDong Ocean Univ, Coll Informat, Zhanjiang 524088, Peoples R China;[2]Cent S Univ, Sch Energy Sci & Engn, Changsha 410083, Hunan, Peoples R China;[3]China Elect Technol Grp Corp, Res Inst 48, Changsha 410111, Hunan, Peoples R China

年份：2014

卷号：131

起止页码：148

外文期刊名：MATERIALS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000340141800042)、、EI(收录号：20142617870026)、Scopus(收录号：2-s2.0-84902662020)、WOS

基金：The work was supported by National Natural Science Foundation of China (No.61272534) and program for scientific research start-up funds of Guangdong Ocean University.

语种：英文

外文关键词：Silicon carbonitride; Sputtering; N-2/Ar flow ratio; Microstructure; Optical band gap

外文摘要：Silicon carbonitride (SiCN) thin films were prepared by reactive magnetron sputtering of a sintered silicon carbide target in a mixture Of argon (Ar), hydrogen and nitrogen (N-2). The thicknesses of the films deposited with the N-2/Ar flow ratios of 0.18 and 0.7 are 68 and 124 nm respectively, and the elements Si, C, N are well-distributed in the films. The Si-Si, Si-C, Si=C, C-C, C-N and N-Si bonds are formed in the SiCN films, the increase of the N-2/Ar flow ratio promotes the nitrogen incorporation into the films and the formation of Si-N bond, but suppresses the formation of C-C, C-Si and N-C bonds. The optical band gaps of the SiCN films deposited with N-2/Ar flow ratios of 0.18 and 0.7 are 2.7 and 2.9 eV respectively. (C) 2014 Elsevier B.V. All rights reserved.