文献类型：期刊文献

英文题名：Effect of power ratio of side/top heaters on the performance and growth of multi-crystalline silicon ingots

作者：Peng, Yinqiao[1];Feng, Tianshu[2];Zhou, Jicheng[2]

机构：[1]Guangdong Ocean Univ, Sch Elect & Informat Engn, Zhanjiang 524088, Peoples R China;[2]Cent South Univ, Sch Energy Sci & Engn, Changsha 410083, Peoples R China

年份：2022

卷号：306

外文期刊名：MATERIALS LETTERS

收录：SCI-EXPANDED(收录号：WOS:000706438200006)、、EI(收录号：20214010971174)、Scopus(收录号：2-s2.0-85115908196)、WOS

基金：This work was funded by Hunan Province Science and Technology Department 'Key Field Research and Development Project' number 2019WK2011.

语种：英文

外文关键词：Multi-crystalline silicon; Crystal growth; Interfaces; Power ratio; Simulation and modelling

外文摘要：A transient global model for the growth process of multi-crystalline silicon ingots was constructed and validated, and the effect of different power ratios of side/top heaters on the liquid-solid interfacial shape and the crystallization rate was simulated using CGSIM software. The results show that the flat liquid-solid interface can be obtained by increasing the power ratio of the side/top heaters to more than 1.8, and the crystallization rate increases with the decrease of power ratio, and the crystal growth period is shortened by the decrease of power ratio.